compound semiconductor造句
例句与造句
- Compound semiconductor materials
化合物半导体材料 - Binary compound semiconductor
二元化合物半导体 - 5 . a formula is deduced to calculate the built - in voltage of the compound semiconductor
通过推导，得出一个计算化合物半导体异质结内建电势的公式。 - Zinc oxide is a ii - vi wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure
氧化锌( zno )是一种具有六方结构的?族宽带隙半导体材料，室温下带隙宽度高达3 . 3ev 。 - Zinc oxide is a ii - iv wide band - gap ( 3 . 37ev ) compound semiconductor with wurtzite crystal structure
氧化锌( zno )是一种具有六方结构的的宽禁带-族半导体材料，室温下能带带隙eg为3 . 37ev 。 - It's difficult to find compound semiconductor in a sentence. 用compound semiconductor造句挺难的
- Zinc oxide is a ii - iv wide band - gap ( eg = 3 . 37ev ) compound semiconductor with wurtzite crystal structure
六角纤锌矿结构的氧化锌是一种重要的宽带隙-族半导体材料，室温下带隙为3 . 37ev 。 - Plasma etching has been widely used in the etching process of si devices . now the study is focused on the microfabrication of compound semiconductor
等离子体干法刻蚀在硅器件的微细加工中已经得到广泛应用，目前研究的焦点集中在化合物半导体。 - Research advances and applications of direct wafer bonding of - v compound semiconductors in optoelectronics device and its integration are generalized
概括介绍了近年来- v族化合物半导体材料键合技术的最新研究进展及其在光电子器件和集成领域的应用。 - It is the only one compound semiconductor whose native oxide is sio2 . therefore , the sic devices can be manufactured using the technology of the silicon processing , for example mos devices
Sic是唯一可以氧化生长成sio _ 2的化合物半导体材料，这使得它可以运用si平面工艺条件进行sic器件的制造，特别制作mos器件方面。 - Led stands for light emitting diode , a kind of semiconductor which is used to give and receive the electronic signal into infrared rays or light , using the characteristics of compound semiconductor
半导体技术已经改变了世界，半导体照明技术将再一次改变我们的世界。随着半导体照明光源在城市景观商业大屏幕交通信号灯手机及 - Zinc oxide as a wide band - gap ( 3 . 3ev ) compound semiconductor with wurtzite crystal structure , is gaining importance for the possible application as a semiconductor laser , due to its ultraviolet emission at room temperature
宽禁带zno半导体为直接带隙材料，具有六方结构，较高的激子束缚能( 60mev ) ，室温下带隙宽度为3 . 3ev 。 - Cadmium zinc telluride ( cd1 - xznxte or czt ) single crystal is one of the three element compound semiconductor materials with great performances used for the detection of x - ray and gamma - ray at room temperature
碲锌镉( cd _ ( 1 - x ) zn _ xte ，简写czt )单晶体是一种性能优异的三元化合物半导体室温核辐射探测器材料，具有闪锌矿型的面心立方结构。 - They have been widely used in optical - fiber communication , satellite communication , super high speed computer , high speed measurement instrument , mobile communication , etc . since gaas is compound semiconductor , it is difficult to achieve high quality gaas crystal
Gaas器件与电路具有速度高、功耗低、噪声小、耐高温、抗辐射等优点，在光纤通信、卫星、超高速计算机、高速测试仪器、移动通信和航空航天等领域中有着重要的应用。 - Aln is an important compound semiconductor material with wide band - gap , which has wurtzite structure too . because of their many excellent physical properties , aln thin films were applied in blue - uv emitting materials , epitaxy buffer layer , soi material and saw device with ghz band
Aln具有许多优异的物理性能，在蓝光、紫外发光材料及热释电材料、外延过渡层、 soi材料的绝缘埋层和ghz级声表面波器件等方面有着重要的应用。 - Besides the element semiconductors , such as si ( called the first generation semiconductor ) , and the compound semiconductors , such as gaas , inp ( called the second generation semiconductor ) , silicon carbide ( sic ) is one of the wide band - gap semiconductor materials ( called the third generation semiconductor )
碳化硅( sic )材料是继第一代元素半导体( si )和第二代化合物半导体( gaas 、 inp 、 gap等)材料之后的第三代宽带隙半导体材料。
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